Home · Extraction of trap energy and location from random telegraph noise in gate leakage current (Ig RTN) of metal–oxide semiconductor field effect transistor (MOSFET)
Home · Extraction of trap energy and location from random telegraph noise in gate leakage current (Ig RTN) of metal–oxide semiconductor field effect transistor (MOSFET)
Extraction of trap energy and location from random telegraph noise in gate leakage current (Ig RTN) of metal–oxide semiconductor field effect transistor (MOSFET)
저자
Heung-Jae Cho, Sanghoon Lee, Byung-Gook Park, and Hyungcheol Shin
