Improvement of Characteristics with a Sub-5 nm Ge-Doped Silicon Nitride Layer in Charge Trap Flash Memory Cells

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Improvement of Characteristics with a Sub-5 nm Ge-Doped Silicon Nitride Layer in Charge Trap Flash Memory Cells

저자

Dong Hua Li, Wandong Kim, Won Bo Shim, Se Hwan Park, Yoon Kim, Gil Sung Lee, Doo-Hyun Kim, Jung Hoon Lee, Jang-Gn Yun, Seongjae Cho, Il Han Park, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park

저널 정보

Nanoscience and Nanotechnology Letters

출간연도

2016

링크

Improvement of Characteristics with a Sub-5 nm Ge-Doped Silicon Nitride Layer in Charge Trap Flash Memory Cells

DRL