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Investigation of Random Telegraph Noise Scaling Dependency in 3-D NAND Using Monte Carlo Simulator
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Investigation of Random Telegraph Noise Scaling Dependency in 3-D NAND Using Monte Carlo Simulator
Investigation of Random Telegraph Noise Scaling Dependency in 3-D NAND Using Monte Carlo Simulator
저자
Eunseok Oh, Hyungcheol Shin
저널 정보
IEEE Transactions on Electron Devices
출간연도
2025
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Investigation of Cell Variation Effect on Z-Interference in Charge-Trap-Based 3-D NAND Flash Memory
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Modeling of effective mobility in 3D NAND flash memory with polycrystalline silicon channel
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