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Modeling of effective mobility in 3D NAND flash memory with polycrystalline silicon channel
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Modeling of effective mobility in 3D NAND flash memory with polycrystalline silicon channel
Modeling of effective mobility in 3D NAND flash memory with polycrystalline silicon channel
저자
Juhyun Kim, Hyungcheol Shin
저널 정보
Journal of Computational Electronics (JCE)
출간연도
2025
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Investigation of Random Telegraph Noise Scaling Dependency in 3-D NAND Using Monte Carlo Simulator
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Development of SRAM in 3-Dimensional Stacked FET With Direct Backside Contact Beyond 1Nm Node
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