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Home · Program/Erase Model of Nitride-Based NAND-Type Charge Trap Flash Memories
Program/Erase Model of Nitride-Based NAND-Type Charge Trap Flash Memories
저자
Doo-Hyun Kim, Seongjae Cho, Dong Hua Li, Jang-Gn Yun, Jung Hoon Lee, Gil Sung Lee, Yoon Kim, Won Bo Shim, Se Hwan Park, Wandong Kim, Hyungcheol Shin, and Byung-Gook Park
저널 정보
Japanese Journal of Applied Physics: Regular Papers
