Home · Random Telegraph Signal-Like Fluctuation Created by Fowler–Nordheim Stress in Gate Induced Drain Leakage Current of the Saddle Type Dynamic Random Access Memory Cell Transistor
Home · Random Telegraph Signal-Like Fluctuation Created by Fowler–Nordheim Stress in Gate Induced Drain Leakage Current of the Saddle Type Dynamic Random Access Memory Cell Transistor
Random Telegraph Signal-Like Fluctuation Created by Fowler–Nordheim Stress in Gate Induced Drain Leakage Current of the Saddle Type Dynamic Random Access Memory Cell Transistor
저자
Heesang Kim, Byoungchan Oh, Kyungdo Kim, Seon-Yong Cha, Jae-Goan Jeong, Sung-Joo Hong, Jong-Ho Lee, Byung-Gook Park, and Hyungcheol Shin
저널 정보
Japanese Journal of Applied Physics: Regular Papers
