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Quantitative analysis on z-interference using reprogram scheme in 3D NAND flash memory Vth distribution
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Quantitative analysis on z-interference using reprogram scheme in 3D NAND flash memory Vth distribution
Quantitative analysis on z-interference using reprogram scheme in 3D NAND flash memory Vth distribution
저자
Jooyoung Lee, Jinil Yoo, Hyungcheol Shin
저널 정보
Solid-State Electronics
출간연도
2025
링크
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이전
Modeling Attempt-to-Escape Frequency: Tunneling Emission of Trapped Electrons in Tunneling Oxides of 3-D NAND Flash Memory
다음
A semi-analytical physics-based transient model for program (PGM) operation of charge-trap-based 3-D NAND flash memories
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