Abstract: 

The temperature dependency of influence of variability sources on SRAM stability were simulated and analyzed in 90 Å non-rectangular Bulk FinFET SRAM cell. RDF is the most dominant variability source. In addition, it is also shown that standard deviation of read static noise margin (σ(RSNM)) by WFV and RDF decreases with increasing temperature, whereas σ(RSNM) by LER increases with increasing temperature. Finally, the analyses on the simulation results mentioned above were performed.