Abstract: 

Random telegraph noise in the drain current (I_d RTN) and the gate current (I_g RTN) has been studied to characterize slow oxide traps in a thin gate oxide. First, I_g RTN was classified into two categories from its dependence on gate bias. Through the analysis of I_d and I_g RTNs, the distribution of oxide traps in the thin oxide was also studied. Most of the oxide traps obtained from I_d RTN were found to be in the middle range of the oxide and to have an energy level within a narrow range whereas the oxide traps from I_g RTN were widely distributed.